Crystal Growth Simulations

We perform simulation on the growth process of Silicon crystal.
The upper half of the domain is the growing crystal and the
lower half is the Silicon melt. The parallel algorithm is based on
domain decomposition with overlapping subdomains.
The calculation is performed on 25 of the 128 AMS's Paragon nodes.
More information.

Temperature contour. The growing crystal (upper) and the melt (lower).

Stream function contour of fluid flow in the melt.
Other Research Projects