W. K. Chui, J. Glimm and F. M. Tangerman
Department of Applied Mathematics and Statistics
State University of New York, Stony Brook, NY 11794-3600, USA
H. Zhang and V. Prasad
Process Modeling Laboratory
Department of Mechanical Engineering
State University of New York, Stony Brook, NY 11794-2300,USA
Materials processing systems, such as the Czochralski crystal growth system, are often characterized by the presence of a number of distinct materials and phases with significantly different thermophysical and transport properties. They may also contain irregular boundaries, moving interfaces and free surfaces. The understanding of the complex transport phenomena in these systems is of vital importance for the design and fabrication of equipment and the optimization and control of the manufacturing process. High performance, high resolution numerical simulation can prove to be an effective tool for the understanding of these transport mechanisms. Massively parallel computers promise to deliver the extensive computer resources required by these simulations. This paper presents a parallel implementation of a high resolution numerical scheme which has been developed to simulate the Czochralski crystal growth processes. The scheme employs adaptive grid generation and curvilinear finite volume discretization to solve the transport equations in a domain with complex geometries. Selected results are presented to demonstrate the feasibility and potential of introducing parallel computations into crystal growth process modeling and simulation.